unisonic technologies co., ltd UTT10NP06 power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2013 unisonic technologies co., ltd qw-r502-773.d dual enhancement mode (n-channel/ p-channel) ? description the utc UTT10NP06 incorporates an n-channel mosfet and a p-channel mosfet it uses utc?s advanced technology to provide customers a minimum on-st ate resistance, high switching speed, low gate charge and cost effectiveness. the utc UTT10NP06 is universally applied in low voltage applications. ? features * r ds(on) < 56m ? @v gs =10v, i d =4a r ds(on) <64m ? @v gs =4.5v, i d =2a * r ds(on) <68m ? @v gs = -10v, i d = -3a r ds(on) <88m ? @v gs = -4.5v, i d = -2a * high switching speed ? symbol sop-8 to-252-4 1 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 4 5 6 7 8 UTT10NP06l-s08-t UTT10NP06g-s08-t sop-8 s1 g1 s2 g2 d d d d tube UTT10NP06l-s08-r UTT10NP06g-s08-r sop-8 s1 g1 s2 g2 d d d d tape reel UTT10NP06l-tn4-t UTT10NP06g-tn4-t to-252-4 s1 g1 d s2 g2 - - - tube UTT10NP06l-tn4-r UTT10NP06g-tn4-r to-252-4 s1 g1 d s2 g2 - - - tape reel note: pin assignment: g: gate d: drain s: source
UTT10NP06 power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r502-773.d ? pin configuration source 1 gate 1 source 2 drain drain drain drain 8 7 6 5 4 3 2 1 sop-8 gate 2 1 2 3 4 5 to-252-4 source 1 gate 1 drain source 2 gate 2
UTT10NP06 power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r502-773.d ? absolute maximum ratings parameter symbol ratings unit n-channel p-channel drain-source voltage v dss 60 -60 v gate-source voltage v gss 20 20 v drain current continuous t a =25c i d 4.5 -3 a pulsed (note 1) i dm 20 -20 a power dissipation t a =25c p d 2.0 w junction temperature t j -55~+150 c storage temperature range t stg -55~+150 c note : absolute maximum ratings are those values bey ond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol ratings unit junction to ambient ja 62.5 c/w ? electrical characteristics (t j =25c, unless otherwise specified) n-channel parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 60 v drain-source leakage current i dss v ds =60v, v gs =0v, t j =25c 1 a v ds =48v, v gs =0v, t j =125c 10 a gate-source leakage current forward i gss v gs =+20v +100 na reverse v gs =-20v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 1 3 v static drain-source on-state resistance (note 2) r ds(on) v gs =10v, i d =4a 36 56 m ? v gs =4.5v, i d =2a 44 64 m ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 1100 1500 pf output capacitance c oss 80 pf reverse transfer capacitance c rss 60 pf switching parameters total gate charge (note 2) q g v gs =4.5v, v ds =48v, i d =4a 120 150 nc gate to source charge q gs 12 nc gate to drain charge q gd 60 nc turn-on delay time (note 2) t d ( on ) v ds =30v, i d =1a, r g =3.3 ? , v gs =10v, r d =30 ? 33 ns rise time t r 26 ns turn-off delay time t d ( off ) 140 ns fall-time t f 64 ns source- drain diode ratings and characteristics drain-source diode forward voltage(note 2) v sd i s =1.7a, v gs =0v 1.2 v
UTT10NP06 power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r502-773.d ? electrical characteristics(cont.) p-channel parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =-250a, v gs =0v -60 v drain-source leakage current i dss v ds =-60v, v gs =0v, t j =25c -1 a v ds =-48v, v gs =0v, t j =125c -10 a gate-source leakage current forward i gss v gs =+20v +100 na reverse v gs =-20v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =-250a -1 -3 v static drain-source on-state resistance (note 2) r ds(on) v gs =-10v, i d =-3a 48 68 m ? v gs =-4.5v, i d =-2a 68 88 m ? dynamic parameters input capacitance c iss v gs =0v, v ds =-25v, f=1.0mhz 1900 2300 pf output capacitance c oss 90 pf reverse transfer capacitance c rss 75 pf switching parameters total gate charge (note 2) q g v gs =-4.5v, v ds =-48v, i d =-3a 200 230 nc gate to source charge q gs 30 nc gate to drain charge q gd 70 nc turn-on delay time (note 2) t d ( on ) v ds =-30v, i d =-1a, r g =3.3 ? v gs =-10v, r d =30 ? 48 ns rise time t r 42 ns turn-off delay time t d ( off ) 280 ns fall-time t f 150 ns source- drain diode ratings and characteristics drain-source diode forward voltage(note 2) v sd i s =-1.7a, v gs =0v -1.2 v notes: 1. pulse width limited by maximum junction temperature 2. pulse width 300s, duty cycle 2%
UTT10NP06 power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r502-773.d ? test circuits and waveforms n-channel p-channel
UTT10NP06 power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r502-773.d ? typical characteristics n-channel drain current, i d (a) drain current, i d (a) 0 drain current vs. source to drain voltage source to drain voltage, v sd (v) drain current, i d (a) 0.2 0.4 0.6 0.8 1.0 0 0.3 0.9 1.2 1.5 1.8 1.2 0.6 drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (v) 0 2 0 0.03 0.06 0.09 1 3 0.12 4 5 v gs =10v, i d =4a 0.15 v gs =4.5v, i d =2a
UTT10NP06 power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r502-773.d ? typical characteristics(cont.) p-channel drain current vs. drain-source breakdown voltage drain current, -i d (a) drain-source breakdown voltage, -bv dss (v) 0.5 0 drain current vs. gate threshold voltage drain current, -i d (a) gate threshold voltage, -v th (v) 1.5 2 3 12.5 0 50 100 150 200 250 300 020 60 80100 40 0 50 100 150 200 250 300 drain current, -i d (a) drain current, -i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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